Milojevic, M,Contreras-Guerrero, R,O'Connor, E,Brennan, B,Hurley, PK,Kim, J,Hinkle, CL,Wallace, RM;

2011

January

Applied Physics Letters

In-situ characterization of Ga2O passivation of In0.53Ga0.47As prior to high-k dielectric atomic layer deposition

Validated

()

MOLECULAR-BEAM EPITAXY GAAS INTERFACES GAAS(001)-C(2X8)/(2X4) SEMICONDUCTOR SUBSTRATE OXIDATION IMPACT STATES

99

Ga2O interfacial passivation layers (IPLs) on In0.53Ga0.47As are investigated using in-situ monochromatic x-ray photoelectron spectroscopy. The oxide is entirely composed of Ga2O when deposited with an effusion cell temperature of 1500 degrees C and substrate temperature of 425 degrees C. The growth on In0.53Ga0.47As reveals slight chemical modification of the surface. The Ga2O behavior and ability to protect the III-V surface are observed following Al2O3 deposition by atomic layer deposition following each precursor pulse. Al2O3 growth by trimethyl-Al (TMA) and water reveals that the IPL undergoes the "clean-up" effect following TMA exposures causing As-As bonding formation resulting in a high interface state density. (C) 2011 American Institute of Physics. [doi:10.1063/1.3615666]

ARTN 042904