Salaun, A,Newcomb, SB,Povey, IM,Salaun, M,Keeney, L,O'Mahony, A,Pemble, ME;

2011

January

Chemical Vapor Deposition

Nucleation and Chemical Transformation of RuO2 Films Grown on (100) Si Substrates by Atomic Layer Deposition

Validated

()

Atomic force microscopy Atomic layer deposition Copper diffusion barriers Interconnect Ruthenium oxide Transmission electron microscopy X-ray diffraction COPPER DIFFUSION BARRIER RUTHENIUM THIN-FILM VAPOR-DEPOSITION AMIDINATE PRECURSOR SURFACE-CHEMISTRY METALLIZATION INTERCONNECTS ELECTRODE ALD NM

17

114

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We describe the formation of RuO2 thin films grown using atomic layer deposition (ALD) on (100) Si substrates from Ru(EtCp)(2) and O-2, and the subsequent influence of annealing temperature and atmosphere on the surface morphology and structure of the deposited layers. The films are characterized using scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), transmission electron microscopy (TEM), and electron diffraction (ED). The as-deposited films consist of RuO2 islands. No significant changes in composition or morphology are observed following annealing in N-2 for 4 h at either 500 or 700 degrees C. Higher temperature annealing in N-2 (820 degrees C, 4 h) results in some modifications to the morphology and structure where ED data indicate the formation of some Ru metal. However, complete transformation from as-deposited RuO2 to Ru metal is, obtained after annealing in forming gas (95% N-2/5% H-2) at 420 degrees C for 5 min.

http://dx.doi.org/10.1002/cvde.201006882

DOI 10.1002/cvde.201006882