Semiconductor nanowires have been the subject of intensive research
investment over the past few decades. Their physical properties afford them applications in a vast network of active microelectronic research fields, including logic device scaling in very large scale integrated circuits, sensor devices, and energy
harvesting. A range of routes to semiconductor nanowire production have opened up
as a result of advances in nanowire fabrication techniques over the last number of
decades. These nanowire fabrication routes can usually be categorized into one of two
paradigms, bottom-up or top-down. Microelectronic systems typically rely on
integrated device platforms, where each device and component thereof can be
individually addressed. This requirement for precise addressability places significant demands on the mode of fabrication, specifically with regard to device definition, placement and density, which have typically been strengths of top-down fabrication
processes. However, in recent years, advances in bottom-up fabrication processes have opened up the possibility of a synergy
between bottom-up and top-down processes to achieve the benefits of both. This review article highlights the important considerations required for the continued advancement of semiconductor nanowire fabrication with a focus on the application of
semiconductor nanowire fabrication for next-generation field-effect transistor devices.