Peer-Reviewed Journal Details
Mandatory Fields
Negara, MA,Veksler, D,Huang, J,Ghibaudo, G,Hurley, PK,Bersuker, G,Goel, N,Kirsch, P
Applied Physics Letters
Analysis of effective mobility and hall effect mobility in high-k based In0.75Ga0.25As metal-oxide-semiconductor high-electron-mobility transistors
Optional Fields
We report an In0.75Ga0.25As metal-oxide-semiconductor high-electron-mobility transistor with a peak Hall mobility of 8300 cm(2)/Vs at a carrier density of 2 x 10(12) cm(-2). Comparison of split capacitance-voltage (CV) and Hall Effect measurements for the extracted electron mobility have shown that the split-CV can lead to an overestimation of the channel carrier concentration and a corresponding underestimation of electron mobility. An analysis of the electron density dependence versus gate voltage allows quantifying the inaccuracy of the split-CV technique. Finally, the analysis supported by multi-channel conduction simulations indicates presence of carriers spill over into the top InP barrier layer at high gate voltages. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3665033]
ARTN 232101
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