Other

Minehane, S,Healy, S,OSullivan, P,McCarthy, K,Mathewson, A,Mason, B

1997

October

Direct parameter extraction for hot-carrier reliability simulation

Validated

1

()

DEGRADATION MODEL

This work describes the application of a novel direct parameter extraction strategy for the BSIM3v3 MOSFET model to the hot-carrier reliability simulation problem. The use of direct extraction procedures allows a very fast extraction of circuit reliability parameters, with a minimum of measurements, and produces physically relevant parameters. The evolution of the extracted parameters during a hot-carrier stress can then be investigated, and the fit of a power-law model to this evolution can be examined. (C) 1997 Elsevier Science Ltd.

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