Other

Martin, A,Ribbrock, T,OSullivan, P,Mathewson, A

1996

November

Enhancement of t(bd) of MOS gate oxides with a single-step pre-stress prior to a CVS in the Fowler-Nordheim regime

Validated

1

()

BREAKDOWN

This work demonstrates that a pre-stressing step can enhance oxide reliability. Single-step pre-stresses were performed with a wide range of parameters prior to a constant voltage stress. It was found that the t(bd) increase due to the pre-stress has two limits and is dependent on both: pre-stress bias level and pre-stress time. A power law relation has been established between t(bd) and the charge injected during the pre-stress. It was found that the charge threshold for the onset of the t(bd) increase is much higher than the initially trapped positive charge. Copyright (C) 1996 Elsevier Science Ltd

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