Other

Hurley, PK,Sheehan, E,Moran, S,Mathewson, A

1996

November

The impact of oxide degradation on the low frequency (1/F) noise behaviour of P channel MOSFETs

Validated

1

()

TRAP DENSITY TRANSISTORS SILICON

Results are presented on the impact of hot carrier degradation on the low frequency (1/f) noise behaviour of p channel MOSFETs. It is found that, in contrast to nMOSFETs, p channel devices exhibit no measurable change in the magnitude of the 1/f noise after severe device degradation at the condition of maximum gate current. The observations have been obtained on a range of device geometries and processes. The degradation results are analysed in conjunction with charge pumping characteristics to explain the insensitivity of the 1/f noise to hot carrier degradation in the case of p channel devices. The significance of these results to the performance of p channel devices in analogue applications is discussed. Copyright (C) 1996 Elsevier Science Ltd

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