Peer-Reviewed Journal Details
Mandatory Fields
Modreanu, M, Monaghan, S, Povey, IM, Cherkaoui, K, Hurley, PK, Androulidaki, M
Microelectronic Engineering
Investigation of bulk defects in amorphous and crystalline HfO2 thin films
Optional Fields
HfO2 Bulk defects FTIR Photoluminescence spectroscopy e-Beam ALD GATE STACKS
We report an optical spectroscopy approach for the investigation of bulk defects in amorphous and polycrystalline HfO2 formed by electron beam evaporation (e-beam) and Plasma Enhanced Atomic Layer Deposition (PEALD). Consistent with previous published work the HfO2 films exhibit visible room temperature photoluminescence (PL) at similar to 620 nm and 720 nm, using a 514 nm photoluminescence excitation. These PL signals are increased as a result of inert ambient annealing (N-2), consistent with the signal originating from oxygen vacancies in the HfO2 film. The PL signals 620 nm and 720 nm are recorded for HfO2 films deposited on silicon and Pt/SiO2/Si substrates confirming that the PL originates from the HfO2 layer. Additional room temperature PL peaks are recorded in the range 911-937 nm, which are only detected in the e-beam deposited HfO2 films. Extending on previous work, and using a photoluminescence excitation of 266 nm, additional low temperature (22 K) PL peaks are detected at 315 nm and 363 nm for the amorphous and crystalline e-beam deposited HfO2 thin films. (C) 2011 Elsevier B.V. All rights reserved.
DOI 10.1016/j.mee.2011.03.107
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