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Negara, MA,Goel, N,Bauza, D,Ghibaudo, G,Hurley, PK
2011
January
Interface state densities, low frequency noise and electron mobility in surface channel In0.53Ga0.47As n-MOSFETs with a ZrO2 gate dielectric
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InGaAs High-k III-V Metal-oxide-semiconductor field-effect transistor (MOSFET) Interface states eta Parameter EXTRACTION FLUCTUATIONS INVERSION DEVICES SI
This paper reports on an investigation of interface state densities, low frequency noise and electron mobility in surface channel In0.53Ga0.47As n-MOSFETs with a ZrO2 gate dielectric. Interface state density values of D-it similar to 5 x 10(12) cm(-2) eV(-1) were extracted using sub-threshold slope analysis and charge pumping technique. The same order of magnitude of trap density was found from low frequency noise measurements. A peak effective electron mobility of 1 200 cm(2)/Vs has been achieved. For these surface channel In0.53Ga0.47As n-MOSFETs, it was found that eta parameter, an empirical parameter used to calculate the effective electric field, was similar to 0.5 5, and is to be comparable to the standard value found in Si device. (c) 2011 Elsevier B.V. All rights reserved.
1095
1097
DOI 10.1016/j.mee.2011.03.091
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