Peer-Reviewed Journal Details
Mandatory Fields
Wong, CS,Bennett, NS,McNally, PJ,Galiana, B,Tejedor, P,Benedicto, M,Molina-Aldareguia, JM,Monaghan, S,Hurley, PK,Cherkaoui, K
Microelectronic Engineering
Multi-technique characterisation of MOVPE-grown GaAs on Si
Optional Fields
micro-Raman spectroscopy Photoluminescence X-ray diffraction Epitaxial Crystallographic mapping RAMAN-SCATTERING GALLIUM-ARSENIDE FILMS SILICON SUBSTRATE EPITAXY LAYERS
The heterogeneous integration of III-V materials on a Si CMOS platform offers tremendous prospects for future high-speed and low-power logic applications. That said this integration generates immense scientific and technological challenges. In this work multi-technique characterisation is used to investigate properties of GaAs layers grown by Metal-Organic Vapour Phase Epitaxy (MOVPE) on Si substrates - (100) with 4 degrees offset towards <1 1 0> - under various growth conditions. This being a crucial first step towards the production of III-V template layers with a relatively lower density of defects for selective epitaxial overgrowth of device quality material. The optical and structural properties of heteroepitaxial GaAs are first investigated by micro-Raman spectroscopy and photoluminescence and reflectance measurements. High-resolution X-ray diffraction (HR-XRD) is used to investigate structural properties. Advanced XRD techniques, including double-axis diffraction and X-ray crystallographic mapping are used to evaluate degrees of relaxation and distribution of the grain orientations in the epilayers, respectively. Results obtained from the different methodologies are compared in an attempt to understand growth kinetics of the materials system. The GaAs overlayer grown with annealing at 735 degrees C following As pre-deposition at 500 degrees C shows the best crystallinity. Close inspection confirms the growth of epitaxial GaAs preferentially oriented along (100) embedded in a highly textured polycrystalline structure. (C) 2010 Elsevier B.V. All rights reserved.
DOI 10.1016/j.mee.2010.09.026
Grant Details