Other

Lu, Y,Hall, S,Tan, LZ,Mitrovic, IZ,Davey, WM,Raeissi, B,Engstrom, O,Cherkaoui, K,Monaghan, S,Hurley, PK,Gottlob, HDB,Lemme, MC

2009

January

Leakage current effects on C-V plots of high-k metal-oxide-semiconductor capacitors

Validated

1

()

GATE DIELECTRICS VOLTAGE CHARACTERIZATION MODEL

With the employment of ultrathin, high dielectric constant gate materials in advanced semiconductor technology, the conventional capacitance-voltage measurement technique exhibits a series of anomalies. In particular, a nonsaturating increase in the accumulation capacitance with reducing measurement frequency is frequently observed, which has not been adequately explained to our knowledge. In this article, the authors provide an explanation for this anomaly and hence set a criterion for the lower bound on measurement frequency. We then present a model which allows the easy extraction of the required parameters and apply it to an experimental set of data. (C) 2009 American Vacuum Society. [DOI: 10.1116/1.3025910]

352

355

DOI 10.1116/1.3025910