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Afanas'ev, VV,Stesmans, A,Brammertz, G,Delabie, A,Sionke, S,O'Mahony, A,Povey, IM,Pemble, ME,O'Connor, E,Hurley, PK,Newcomb, SB
2009
July
Band offsets at interfaces of (100)InxGa1-xAs (0 <= x <= 0.53) with Al2O3 and HfO2
Validated
1
()
Optional Fields
Semiconductor-insulator interface Interface barrier Internal photoemission
The electron energy band alignment at interfaces of InxGa1-xAs (0 <= x <= 0.53) with atomic-layer deposited insulators Al2O3 and HfO2 is characterized using combined measurements of internal photoemission of electrons and photoconductivity. The measured energy of the InxGa1-x As valence band top is found to be only marginally influenced by the semiconductor composition. This result suggests that the observed band-gap narrowing from 1.42 to 0.75 eV when the In content increases from 0 to 0.53 occurs mostly through downshift of the semiconductor conduction band bottom. Electron states originating from the interfacial oxidation of InxGa1-xAs lead to reduction of the electron barrier at the semiconductor/oxide interface. (C) 2009 Elsevier B.V. All rights reserved,
1550
1553
DOI 10.1016/j.mee.2009.03.003
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