Other

Gottlob, HDB,Lemme, MC,Schmidt, M,Echtermeyer, TJ,Mollenhauer, T,Kurz, H,Cherkaoui, K,Hurley, PK,Newcomb, SB

2008

January

Gentle FUSI NiSi metal gate process for high-k dielectric screening

Validated

1

()

FUSI NiSi High-k Ultrathin dielectric Material screening TRANSISTORS MOSFETS SILICON OXIDES GD2O3

In this paper, a process flow well suited for screening of novel high-k dielectrics is presented. In vacuo silicon capping of the dielectrics excludes process and handling induced influences especially if hygroscopic materials are investigated. A gentle, low thermal budget process is demonstrated to form metal gate electrodes by turning the silicon capping into a fully silicided nickel silicide. This process enables the investigation of rare earth oxide based high-k dielectrics and specifically their intrinsic material properties using metal oxide semiconductor (MOS) capacitors. We demonstrate the formation of nickel monosilicide electrodes which show smooth interfaces to the lanthanum- and gadolinium-based high-k oxide films. The dielectrics have equivalent oxide thicknesses of EOT = 0.95 nm (lanthanum silicate) and EOT = 0.6 nm (epitaxial gadolinium oxide). (c) 2008 Elsevier B.V. All rights reserved.

2019

2021

DOI 10.1016/j.mee.2008.03.016