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Lu, Y,Buiu, O,Hall, S,Hurley, PK
2005
May
Optical and electrical characterization of hafnium oxide deposited by MOCVD
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CHEMICAL-VAPOR-DEPOSITION GATE DIELECTRICS HFO2 FILMS STABILITY SILICON
The paper reports on electrical and optical investigations performed on HfO2 high-k films deposited by Metal-organic chemical vapor deposition (MOCVD). Spectroellipsometry investigations show the presence of a transition layer between HfO2 and the silicon substrate, which can be optically modelled as a mixture of Si and SiO2; this information is further used in the assessment of the electrical measurements. Hysteresis effects have been observed in the Capacitance-Voltage (C-V) measurements for the as-deposited sample as well as the annealed samples. For the samples with large hysteresis, Poole-Frenkel (PF) conduction is the most likely dominant conduction mechanism. The energy of dominant trap level was found to be similar to 0.7 eV. (c) 2004 Elsevier Ltd. All rights reserved.
965
968
DOI 10.1016/j.microrel.2004.11.015
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