Tong, L,Larsson, JA,Nolan, M,Murtagh, M,Greer, JC,Barbe, M,Bailly, F,Chevallier, J,Silvestre, FS,Loridant-Bernard, D,Constant, E,Constant, FM

2002

January

Nuclear Instruments & Methods In Physics Research Section B-Beam Interactions With Materials And Atoms

Photo-dissociation of hydrogen passivated dopants in gallium arsenide

Validated

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hydrogen passivation gallium arsenide- photo-dissociation LIGHT-INDUCED REACTIVATION INTERSTITIAL HYDROGEN SI DOPANTS GAAS COMPLEXES SILICON NEUTRALIZATION IMPURITIES DYNAMICS CARBON

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A theoretical and experimental study of the photo-dissociation mechanisms of hydrogen passivated n- and p-type dopants in gallium arsenide is presented. The photo-induced dissociation of the Si-Ga-H complex has been observed for relatively low photon energies (3.48 eV), whereas the photo-dissociation of C-As-H is not observed for photon energies up to 5.58 eV. This fundamental difference in the photo-dissociation behavior between the two dopants is explained in terms of the localized excitation energies about the Si H and C-H bonds. (C) 2002 Published by Elsevier Science B.V.