Fahy, S,Greer, JC

2000

March

Materials Science In Semiconductor Processing

Alloy corrections to the virtual crystal approximation and explicit band structure calculations for silicon-germanium

Validated

()

silicon-germanium band structure electron scattering device modeling ELECTRONIC-STRUCTURE SI GE SEMICONDUCTORS MOBILITY

3

109

114

Cluster and band structure calculations for the electronic energy levels of silicon-germanium systems are presented. Much of the electronic structure information concerning silicon-germanium alloys to date relies upon the virtual crystal approximation (VCA). A discussion is presented for corrections beyond the VCA and in particular the use of full band calculations for device modeling of SiGe technologies. (C) 2000 Elsevier Science Ltd. All rights reserved.