Peer-Reviewed Journal Details
Mandatory Fields
Alloing, B. and Zinoni, C. and Zwiller, V. and Li, L. H. and Monat, C. and Gobet, M. and Buchs, G. and Fiore, A. and Pelucchi, E. and Kapon, E.
Applied Physics Letters
Growth and characterization of single quantum dots emitting at 1300 nm
Optional Fields
We have optimized the molecular-beam epitaxy growth conditions of self-organized InAs/GaAs quantum dots (QDs) to achieve a low density of dots emitting at 1300 nm at low temperature. We used an ultralow InAs growth rate, lower than 0.002 ML/s, to reduce the density to 2 dots/mu m(2) and an InGaAs capping layer to achieve longer emission wavelength. Microphotoluminescence spectroscopy at-low-temperature reveals emission lines characteristic of exciton-biexciton behavior. We also study the temperature dependence of the photoluminescence, showing clear single QD emission up to 90 K. With these results, InAs/GaAs QDs appear as a very promising system for future applications of single photon sources in fiber-based quantum cryptography. (c) 2005 American Institute of Physics.
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