We studied the uniformity of site-controlled, pyramidal InGaAs/AlGaAs semiconductor quantum dots (QDs) grown by organometallic chemical vapor deposition on prepatterned substrates. The inhomogeneous broadening of the QD ground state emission has been determined to be 7.6 meV by statistical single QD photoluminescence spectroscopy on a set of 120 individual QD structures. Taking into account the ground-to-excited state separation of 55 meV, such a small value has not yet been observed in QD systems where other growth mechanisms are employed. Moreover, a high reproducibility of the sharp QD emission features in the single exciton regime has been observed. (C) 2004 American Institute of Physics.