Cai, C. and Nathan, M. I. and Rubini, S. and Sorba, L. and Mueller, B. and Pelucchi, E. and Franciosi, A.

1998

Applied Physics Letters

Electrical properties of n-n ZnSe/In0.04Ga0.96As(001) heterojunctions

Validated

()

73

14

Lattice-matched n-n ZnSe/In0.04Ga0.96As heterojunctions were studied by means of current density versus voltage (J-V) and capacitance versus voltage (C-V) measurements. The resulting characteristics indicate that the behavior of this n-n heterostructure can be explained by a back-to-back double Schottky diode model. The value of conduction band discontinuity (Delta E-c) is found to be 0.10-0.12 eV. (C) 1998 American Institute of Physics. [S0003-6951(98)01740-9].