Peer-Reviewed Journal Details
Mandatory Fields
Cai, C. and Nathan, M. I. and Rubini, S. and Sorba, L. and Mueller, B. and Pelucchi, E. and Franciosi, A.
Applied Physics Letters
Electrical properties of n-n ZnSe/In0.04Ga0.96As(001) heterojunctions
Optional Fields
Lattice-matched n-n ZnSe/In0.04Ga0.96As heterojunctions were studied by means of current density versus voltage (J-V) and capacitance versus voltage (C-V) measurements. The resulting characteristics indicate that the behavior of this n-n heterostructure can be explained by a back-to-back double Schottky diode model. The value of conduction band discontinuity (Delta E-c) is found to be 0.10-0.12 eV. (C) 1998 American Institute of Physics. [S0003-6951(98)01740-9].
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