Peer-Reviewed Journal Details
Mandatory Fields
Colli, A. and Pelucchi, E. and Franciosi, A.
Applied Physics Letters
Controlling the native stacking fault density in II-VI/III-V heterostructures
Optional Fields
We performed a systematic study of the native stacking fault density in ZnSe/GaAs(001) heterostructures implemented using several of the interface fabrication procedures proposed in the literature. Only two of the procedures examined reproducibly lead to stacking fault densities below 10(4) cm(-2). Despite the apparent differences, the two procedures were found to yield quantitatively similar defect densities, and qualitatively similar interface compositions and band alignments. (C) 2003 American Institute of Physics.
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