Marinelli, C. and Sorba, L. and Lazzarino, M. and Kumar, D. and Pelucchi, E. and Muller, B. H. and Orani, D. and Rubini, S. and Franciosi, A. and De Franceshi, S. and Beltran, F.

2000

Tunable Schottky barrier contacts to InxGa1-xAs

Validated

()

18

4

A/InxGa1-xAs(001) diodes incorporating Si bilayers deposited under As or Al flux were fabricated by molecular-beam epitaxy on GaAs(001) wafers for 0.2