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Moret, N. and Oberli, D. Y. and Pelucchi, E. and Gogneau, N. and Rudra, A. and Kapon, E.
2006
Applied Physics Letters
Correlation between optical properties and interface morphology of GaAs/AlGaAs quantum wells
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We investigate the embedded interfaces of GaAs/AlGaAs quantum wells grown by metal organic vapor phase epitaxy on slightly (< 1 degrees)-misoriented (001) substrates using selective etching and atomic force microscopy. Depending on the substrate misorientation, we observe different growth modes at the embedded interfaces, which are directly correlated to the photoluminescence linewidth. We show that the narrowest linewidth is obtained on 0.2 degrees-off (001) substrates for which the heterointerfaces consist of atomically smooth narrow terraces. We investigate the embedded interfaces of GaAs/AlGaAs quantum wells grown by metal organic vapor phase epitaxy on slightly (< 1 degrees)- misoriented (001) substrates using selective etching and atomic force microscopy. Depending on the substrate misorientation, we observe different growth modes at the embedded interfaces, which are directly correlated to the photoluminescence linewidth. We show that the narrowest linewidth is obtained on 0.2 degrees-off (001) substrates for which the heterointerfaces consist of atomically smooth narrow terraces. (c) 2006 American Institute of Physics.
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