Peer-Reviewed Journal Details
Mandatory Fields
Orani, D. and Piccin, M. and Rubini, S. and Pelucchi, E. and Bonanni, B. and Franciosi, A. and Passaseo, A. and Cingolani, R. and Khan, A.
Physica Status Solidi A-Applications and Materials Science
Epitaxial Al/GaN and Au/GaN junctions on as-grown GaN(0001)1x1 surfaces
Optional Fields
GaN(0001) epilayers were fabricated by rf-plasma enhanced molecular beam epitaxy on GaN templates. The templates were grown by metalorganic chemical vapor deposition on sapphire. The layers exhibited the 2 x 2 reconstruction of the Ga-face during growth and the 1 x 1 reconstruction upon cooling. On such surfaces, AUn-GaN and Au/n-GaN junctions were fabricated in-situ by molecular beam epitaxy. X-ray photoemission spectroscopy studies allowed us to determine n-type Schottky barrier heights of 0.61 +/- 0.06 and 0.98 +/- 0.06 eV, respectively, for the two types of epitaxial junctions. (c) 2005 WILEY-VCH Verlag GmbH & Co.
Grant Details