Peer-Reviewed Journal Details
Mandatory Fields
Rubini, S. and Bonanni, B. and Pelucchi, E. and Franciosi, A. and Garulli, A. and Parisini, A. and Zhuang, Y. and Bauer, G. and Holy, V.
ZnSe/CdTe/ZnSe heterostructures
Optional Fields
Epitaxial ZnSe/CdTe/ZnSe heterostructures were successfully fabricated by molecular beam epitaxy on GaAs(001) wafers despite the large in-plane lattice mismatch (14.3%) between the two II-VI materials. X-ray reciprocal space maps and selected area diffraction results indicate single-phase, (111)-oriented growth of CdTe onto the lower ZnSe(001) cladding layer, and single-phase, (111)-oriented growth of the topmost ZnSe layer, with a small inhomogeneous residual strain within the CdTe layer. Cross-sectional transmission electron micrographs reveal a distribution of rotational microtwins within the (111)-oriented layers near each interface. The low-temperature near-band-edge photoluminescence from the CdTe layer is free-exciton related, and exhibits a linewidth of only 5-6 meV. (C) 2000 American Vacuum Society. [S0734-211X(00)05904-7].
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