Rubini, S. and Bonanni, B. and Pelucchi, E. and Franciosi, A. and Zhuang, Y. and Bauer, G.

1999

Journal of Crystal Growth

CdTe epitaxial layers in ZnSe-based heterostructures

Validated

()

201

We investigated the possibility of integrating CdTe layers in ZnSe-based heterostructures on GaAs(001) wafers. In particular, we used molecular beam epitaxy to fabricate ZnSe/CdTe/ZnSe structures on GaAs buffer layers. CdTe was found to grow with (111) orientation on ZnSe(001) 2 x 1. Epitaxial overgrowth of ZnSe(111) on CdTe(111) was observed for the first time, with [11 (2) over bar]ZnSe parallel to[110]GaAs and [1 (1) over bar 0]ZnSe parallel to[1 (1) over bar 0]GaAs epitaxial relations. (C) 1999 Elsevier Science B.V. All rights reserved.