Peer-Reviewed Journal Details
Mandatory Fields
Rubini, S. and Bonanni, B. and Pelucchi, E. and Franciosi, A. and Zhuang, Y. and Bauer, G.
Journal of Crystal Growth
CdTe epitaxial layers in ZnSe-based heterostructures
Optional Fields
We investigated the possibility of integrating CdTe layers in ZnSe-based heterostructures on GaAs(001) wafers. In particular, we used molecular beam epitaxy to fabricate ZnSe/CdTe/ZnSe structures on GaAs buffer layers. CdTe was found to grow with (111) orientation on ZnSe(001) 2 x 1. Epitaxial overgrowth of ZnSe(111) on CdTe(111) was observed for the first time, with [11 (2) over bar]ZnSe parallel to[110]GaAs and [1 (1) over bar 0]ZnSe parallel to[1 (1) over bar 0]GaAs epitaxial relations. (C) 1999 Elsevier Science B.V. All rights reserved.
Grant Details