Peer-Reviewed Journal Details
Mandatory Fields
Rubini, S. and Milocco, E. and Sorba, L. and Pelucchi, E. and Franciosi, A. and Garulli, A. and Parisini, A. and Zhuang, Y. and Bauer, G.
Physical Review B
Structural and electronic properties of ZnSe/AlAs heterostructures
Optional Fields
Pseudomorphic ZnSe/AlAs(001) heterostructures were fabricated by molecular beam epitaxy on GaAs wafers. Intrinsic stacking faults on 111 planes originating at the II-VI/III-V interface and propagating throughout the II-VI overlayer were the main type of native defects observed. The interface termination was varied by adsorption of Zn or Se onto the AlAs(001) 3 X 1 surface prior to ZnSe growth. The resulting large changes in interface composition and band discontinuities mirror those obtained by employing Zn- or Se-rich growth conditions in the early stages of heterojunction fabrication. Band offsets calculated from first principles for ZnSe/GaAs, when rescaled by the different magnitude of the electrostatic interface dipole, yield a range of predictions in good agreement with experiment fur ZnSe/AlAs.
Grant Details