Rubini, S. and Pelucchi, E. and Lazzarino, M. and Kumar, D. and Franciosi, A. and Berthod, C. and Binggeli, N. and Baldereschi, A.

2001

Physical Review B

Ideal unreactive metal/semiconductor interfaces: The case of Zn/ZnSe(001)

Validated

()

63

23

Zn/ZnSe(001) interfaces fabricated by metal deposition at room temperature onto ZnSe(001) c(2x2), 2 x1, and 1x1 surfaces were studied by means of x-ray photoemission spectroscopy and current-voltage and capacitance-voltage measurements. All junctions exhibited an ideal unreactive behavior and an identical Schottky barrier height of 1.85 eV (for p-type conduction). Ab initio pseudopotential calculations for model interface configurations provide a microscopic explanation of the different behavior of Zn/ZnSe junctions as compared to al/ZnSe and Au/ZnSe junctions.