Peer-Reviewed Journal Details
Mandatory Fields
Rubini, S. and Pelucchi, E. and Lazzarino, M. and Kumar, D. and Franciosi, A. and Berthod, C. and Binggeli, N. and Baldereschi, A.
2001
Physical Review B
Ideal unreactive metal/semiconductor interfaces: The case of Zn/ZnSe(001)
Validated
()
Optional Fields
63
23
Zn/ZnSe(001) interfaces fabricated by metal deposition at room temperature onto ZnSe(001) c(2x2), 2 x1, and 1x1 surfaces were studied by means of x-ray photoemission spectroscopy and current-voltage and capacitance-voltage measurements. All junctions exhibited an ideal unreactive behavior and an identical Schottky barrier height of 1.85 eV (for p-type conduction). Ab initio pseudopotential calculations for model interface configurations provide a microscopic explanation of the different behavior of Zn/ZnSe junctions as compared to al/ZnSe and Au/ZnSe junctions.
Grant Details