O'Connor, E. and Monaghan, S. and Cherkaoui, K. and Povey, I.M. and Hurley, P.K.

2011

November

Applied Physics Letters

Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment

Published

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Ammonium sulfide Arrhenius Atomic layer deposited Capacitance voltage Conductance-voltage measurements Diffusion controlled Metal-oxide-semiconductor capacitors Minority carrier P-type Varying temperature

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The electrical properties of metal-oxide-semiconductor capacitors incorporating atomic layer deposited Al 2O 3 on n-type and p-type In 0.53Ga 0.47As were investigated. A clear minority carrier response was observed for both n-type and p-type Au/Ni/Al 2O 3/In 0.53Ga 0.47As devices following an optimized ammonium sulfide (NH 4) 2S treatment. Capacitance-voltage and conductance-voltage measurements performed at varying temperatures allowed an Arrhenius extraction of activation energies for the minority carrier response, indicating a transition from a generation- recombination regime to a diffusion controlled response. © 2011 American Institute of Physics.

10.1063/1.3663535