Peer-Reviewed Journal Details
Mandatory Fields
O'Connor, E. and Monaghan, S. and Cherkaoui, K. and Povey, I.M. and Hurley, P.K.
2011
November
Applied Physics Letters
Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment
Published
()
Optional Fields
Ammonium sulfide Arrhenius Atomic layer deposited Capacitance voltage Conductance-voltage measurements Diffusion controlled Metal-oxide-semiconductor capacitors Minority carrier P-type Varying temperature
99
21
212901-1
212901-3
The electrical properties of metal-oxide-semiconductor capacitors incorporating atomic layer deposited Al 2O 3 on n-type and p-type In 0.53Ga 0.47As were investigated. A clear minority carrier response was observed for both n-type and p-type Au/Ni/Al 2O 3/In 0.53Ga 0.47As devices following an optimized ammonium sulfide (NH 4) 2S treatment. Capacitance-voltage and conductance-voltage measurements performed at varying temperatures allowed an Arrhenius extraction of activation energies for the minority carrier response, indicating a transition from a generation- recombination regime to a diffusion controlled response. © 2011 American Institute of Physics.
10.1063/1.3663535
Grant Details