Conference Publication Details
Mandatory Fields
Djara, V. , Cherkaoui, K. , Schmidt, M. , Gomeniuk, Y.Y. , O'Connor, É. , Povey, I.M. , O'Connell, D. , Monaghan, S. , Pemble, M.E. , Hurley, P.K.
13th International Conference on Ultimate Integration on Silicon (ULIS) 2012, art. no. 6193349
Study of interface and oxide defects in high-k/In0.53Ga0.47As n-MOSFETs
Optional Fields
border traps High-k InGaAs interface traps MOSFET oxide charges Split C-V

Interface and oxide defects in surface-channel In 0.53Ga 0.47As n-MOSFETs, featuring a threshold voltage, V T, of 0.43 V, a subthreshold swing, SS, of 150 mV/dec, an I ON/I OFF of 10 4 and a source/drain resistance, R SD, of 103 Ω, have been investigated using "split C-V" measurements and self-consistent Poisson-Schrödinger quasi-static C-V simulations. An integrated density of traps across the In 0.53Ga 0.47As band gap at the Al 2O 3/In 0.53Ga 0.47As interface, N Trap, of 7.8 x 10 12 /cm 2, has been obtained from a comparison of the theoretical and experimental quasi-static C-V responses, where N Trap reflects the combined contribution of interface traps and border traps. An equivalent surface density of fixed positive oxide charges, N +, of 1.4 x 10 12 /cm 2 is also reported. Finally, the application of the Maserjian Y-function to the Al 2O 3/In 0.53Ga 0.47As MOS system is briefly discussed.

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