Conference Publication Details
Mandatory Fields
Miranda, E. , O'connor, E. , Hughes, G. , Casey, P. , Cherkaoui, K. , Monaghan, S. , Long, R. , O'Connell, D. , Hurley, P.K.
Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) 2009, art. no. 5232695
Post-breakdown conduction in metal gate/MgO/InP structures
Scopus: 2 ()
Optional Fields
Break down Broken down Conduction mode Electrical behaviors II-IV semiconductors InP IV characteristics Magnesium oxides Power law model Switching behaviors Voltage ranges Indium phosphide Integrated circuits Magnesium Oxide films Quality assurance Safety factor Structural metals Failure analysis
The electrical behavior of broken down thin films of magnesium oxide (MgO) grown on indium phosphide (InP) substrates was investigated. To our knowledge, this is the first report that identifies the Soft Break Down (SBD) conduction mode in a metal gate/high-κ/III-V semiconductor structure. It is shown that the leakage current associated with this failure mode follows the power-law model I=aVb for both injection polarities in a voltage range that largely exceeds the one reported for Si02. We also show that the Hard Break Down (HBD) current is remarkably high, involving significant thermal effects that are believed to be at the origin of the switching behavior exhibited by the I-V characteristics.
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