Conference Publication Details
Mandatory Fields
Monaghan, S. , Hurley, P.K. , Cherkaoui, K. , Negara, M.A. , Schenk, A.
9th International Conference on ULtimate Integration of Silicon (ULIS) 2008, art. no. 4527151
Determination of physical parameters for HfO2/SiOx/TiN MOSFET gate stacks by electrical characterization and reverse modeling
Scopus: 4 ()
Optional Fields
Electron affinity Electron effective mass HfO2 High-k gate stacks Reverse modeling Tunneling
In this paper we present the results of a combined electrical and modeling study to determine the tunneling electron effective mass and electron affinity for HfO2. Experimental capacitance-voltage (C-V) and current-voltage (I-V) characteristics are presented for HfD2 films deposited on Si(100) substrates by atomic layer deposition (ALD) and electron beam evaporation (e-beam), with equivalent oxide thickness in the range 10 and 12.5Å. We extend on previous studies by applying a self-consistent 1D-Schrödinger-Poisson solver to the entire gate stack, including the inter-layer SiOx region and to the adjacent substrate for non-local barrier tunneling selfconsistently linked to the quantum-drift-diffusion transport model. The reverse modeling is applied to the correlated gate and drain currents in long channel MOSFET structures. Values of 0.11 ± (0.03) mo and 2.0 ± (0.25) eV were determined for the HfO 2 electron effective mass and electron affinity.
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