van der Meulen, M. I.,Petkov, N.,Morris, M. A.,Kazakova, O.,Han, X. H.,Wang, K. L.,Jacob, A. P.,Holmes, J. D.;

2009

January

Nano Letters

Single Crystalline Ge1.xMnx Nanowires as Building Blocks for Nanoelectronics

Validated

()

9

1

50

56

Magnetically doped Si and Ge nanowires have potential application in future nanowire spin-based devices. Here, we report a supercritical fluid method for producing single crystalline Mn-doped Ge nanowires with a Mn-doping concentration of between 0.5-1.0 atomic % that display ferromagnetism above 300 K and a superior performance with respect to the hole mobility of around 340 cm(2)/Vs, demonstrating the potential of using these nanowires as building blocks for electronic devices.

1530-6984

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