O. V. Bilousov, J. J. Carvajal, D. Drouin, X. Mateos, F. Díaz, M. Aguiló and C. O'Dwyer

2012

Acs Applied Materials & Interfaces

Reduced Workfunction Intermetallic Seed Layers Allow Growth of Porous n-GaN and Low Resistivity, Ohmic Electron Transport

Published

()

4

6927

6934