Cherkaoui, K., Djara, V., O'Connor, É., Lin, J., Negara, M.A., Povey, I.M., Monaghan, S., Hurley, P.K.

5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting; Code93682

Can metal/Al 2O 3/In 0.53Ga 0.47As/InP MOSCAP properties translate to metal/Al 2O 3/In 0.53Ga 0.47As/InP MOSFET characteristics?

2012

May

Published

1

()

AC signals; Capacitance voltage; Electrical characteristic; Forming gas annealing; Interface state density; MOS-FET; MOSFETs; N-channel; Oxide charge density; Process flows; State concentration; Gallium; Interface states; Manufacture; Materials science; MOS capacitors; MOSFET devices; nanosystems

Dielectric Science and Technology Division of ECS,Electronics and Photonics,Sensor,New Technology Subcommittee,IEEE Electron Device Society (EDS)

79

88

Seattle, WA, USA

06-MAY-12

10-MAY-12

In this paper we present the electrical characteristics of Metal/Al ₂O ₃/In _0.53Ga _0.47As/InP MOS capacitor (MOSCAP) structures formed using a relatively straightforward capacitor process flow and for MOSCAPs which experience the full process flow of an In _0.53Ga _0.47As n channel MOSFET. From analysis of the capacitance-voltage response over a range of ac signal frequencies fixed oxide charge densities and interface state concentrations are determined for the MOSCAP structures and the impact of forming gas annealing on oxide and interface state densities is presented. The MOSCAP results are compared to the properties of fully processed metal/Al ₂O ₃/In _0.53Ga _0.47As/InP n channel MOSFETs, and the results indicate that the findings from the MOSCAPS do translate to the measured InGaAs MOSFET characteristics.

Dielectric Science and Technology Division of ECS,Electronics and Photonics,Sensor,New Technology Subcommittee,IEEE Electron Device Society (EDS)

http://ecst.ecsdl.org/content/45/3/79.full.pdf+html

10.1149/1.3700874