A novel surface modification technique that is designed to protect, passivate, and functionalize InP surfaces by means of chemical binding of specific molecular species is described. The new technique-in situ surface adduct passivation (INSAP)-follows conventional MOCVD by an atomic layer expitaxy (ALE) type process in which first the group V precursor and then an amine are allowed to interact with the freshly grown surface to form an adduct layer, which is resistant to oxidation but removable by gentle heating.A novel surface modification technique that is designed to protect, passivate, and functionalize InP surfaces by means of chemical binding of specific molecular species is described. The new technique-in situ surface adduct passivation (INSAP)-follows conventional MOCVD by an atomic layer expitaxy (ALE) type process in which first the group V precursor and then an amine are allowed to interact with the freshly grown surface to form an adduct layer, which is resistant to oxidation but removable by gentle heating.