Bond, P.,Brier, P. N.,Fletcher, J.,Gorry, P. A.,Pemble, M. E.

1993

June

Chemical Physics Letters

Reactive Scattering of Cl2 on Gaas (100) - Cl2 and Gacl Product Distributions

Validated

()

208

3-43-4

269

275269

Time-of-flight and angular distributions of GaCl produced from etching of GaAs (100) by molecular chlorine have been investigated in the range 400-550-degrees-C by pulsed, supersonic, molecular beam scattering. The angular distribution is well described by a cosine curve as expected for simple desorption. The TOF distributions of GaCl reveal that it is produced by two surface processes. The Cl2 distributions also show two components: (i) prompt production (accommodation and desorption of incident Cl2) and (ii) delayed chemical production. In all cases the delayed component is well described by a simple e-t/tau expression. Chemical production Of Cl2 seems strongly linked to the slower GaCl production and both pathways display the same temperature dependence. The time constants obey tau = tau0 exp(E/kT) with E= 110 +/- 10 kJ mol-1 for both pathways.Time-of-flight and angular distributions of GaCl produced from etching of GaAs (100) by molecular chlorine have been investigated in the range 400-550-degrees-C by pulsed, supersonic, molecular beam scattering. The angular distribution is well described by a cosine curve as expected for simple desorption. The TOF distributions of GaCl reveal that it is produced by two surface processes. The Cl2 distributions also show two components: (i) prompt production (accommodation and desorption of incident Cl2) and (ii) delayed chemical production. In all cases the delayed component is well described by a simple e-t/tau expression. Chemical production Of Cl2 seems strongly linked to the slower GaCl production and both pathways display the same temperature dependence. The time constants obey tau = tau0 exp(E/kT) with E= 110 +/- 10 kJ mol-1 for both pathways.

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