In comparison to ITO films prepared by chemical solution deposition on bare substrates, the use of a ZnO buffer layer and Al(2)O(3) barrier layer has been shown to have a significant effect on morphology, measured sheet resistance and therefore resistivity. In the case of quartz substrates, ITO resistivity decreased from 9.6 x 10(-3) Omega cm to 4.3 X 10(-3) Omega cm on incorporation of a ZnO buffer layer and Al(2)O(3) barrier layer, both grown by ALD. A change in surface morphology was observed, due to the presence of the buffer layer, however, the ZnO buffer layer was not found to influence the XRD pattern of the ITO films.In comparison to ITO films prepared by chemical solution deposition on bare substrates, the use of a ZnO buffer layer and Al(2)O(3) barrier layer has been shown to have a significant effect on morphology, measured sheet resistance and therefore resistivity. In the case of quartz substrates, ITO resistivity decreased from 9.6 x 10(-3) Omega cm to 4.3 X 10(-3) Omega cm on incorporation of a ZnO buffer layer and Al(2)O(3) barrier layer, both grown by ALD. A change in surface morphology was observed, due to the presence of the buffer layer, however, the ZnO buffer layer was not found to influence the XRD pattern of the ITO films.