Peer-Reviewed Journal Details
Mandatory Fields
Zhang, P. F.,Nagle, R. E.,Deepak, N.,Povey, I. M.,Gomeniuk, Y. Y.,O'Connor, E.,Petkov, N.,Schmidt, M.,O'Regan, T. P.,Cherkaoui, K.,Pemble, M. E.,Hurley, P. K.,Whatmore, R. W.
2011
July
Microelectronic Engineering
The structural and electrical properties of the SrTa2O6/In0.53Ga0.47As/InP system
Validated
()
Optional Fields
88
77
1054
10571054
The structural and electrical properties of SrTa2O6(SrTaO)/n-In0.53GaAs0.47(InGaAs)/InP structures where the SrTaO was grown by atomic vapor deposition, were investigated. Transmission electron microscopy revealed a uniform, amorphous SrTaO film having an atomically flat interface with the InGaAs substrate with a SrTaO film thickness of 11.2 nm. The amorphous SrTaO films (11.2 nm) exhibit a dielectric constant of similar to 20, and a breakdown field of > 8 MV/cm. A capacitance equivalent thickness of similar to 1 nm is obtained for a SrTaO thickness of 3.4 nm, demonstrating the scaling potential of the SrTaO/InGaAs MOS system. Thinner SrTaO films (3.4 nm) exhibited increased non-uniformity in thickness. From the capacitance-voltage response of the SrTaO (3.4 nm)/n-InGaAs/InP structure, prior to any post deposition annealing, a peak interface state density of similar to 2.3 x 10(13) cm(-2) eV(-1) is obtained located at similar to 0.28 eV (+/- 0.05 eV) above the valence band energy (E-v) and the integrated interface state density in range E-v + 0.2 to E-v + 0.7 eV is 6.8 x 10(12) cm(-2). The peak energy position (0.28 +/- 0.05 eV) and the energy distribution of the interface states are similar to other high-k layers on InGaAs, such as Al2O3 and LaAlO3, providing further evidence that the interface defects in the high-k/InGaAs system are intrinsic defects related to the InGaAs surface. (c) 2011 Elsevier B.V. All rights reserved.The structural and electrical properties of SrTa2O6(SrTaO)/n-In0.53GaAs0.47(InGaAs)/InP structures where the SrTaO was grown by atomic vapor deposition, were investigated. Transmission electron microscopy revealed a uniform, amorphous SrTaO film having an atomically flat interface with the InGaAs substrate with a SrTaO film thickness of 11.2 nm. The amorphous SrTaO films (11.2 nm) exhibit a dielectric constant of similar to 20, and a breakdown field of > 8 MV/cm. A capacitance equivalent thickness of similar to 1 nm is obtained for a SrTaO thickness of 3.4 nm, demonstrating the scaling potential of the SrTaO/InGaAs MOS system. Thinner SrTaO films (3.4 nm) exhibited increased non-uniformity in thickness. From the capacitance-voltage response of the SrTaO (3.4 nm)/n-InGaAs/InP structure, prior to any post deposition annealing, a peak interface state density of similar to 2.3 x 10(13) cm(-2) eV(-1) is obtained located at similar to 0.28 eV (+/- 0.05 eV) above the valence band energy (E-v) and the integrated interface state density in range E-v + 0.2 to E-v + 0.7 eV is 6.8 x 10(12) cm(-2). The peak energy position (0.28 +/- 0.05 eV) and the energy distribution of the interface states are similar to other high-k layers on InGaAs, such as Al2O3 and LaAlO3, providing further evidence that the interface defects in the high-k/InGaAs system are intrinsic defects related to the InGaAs surface. (c) 2011 Elsevier B.V. All rights reserved.
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