Afanas'ev, V. V.,Stesmans, A.,Brammertz, G.,Delabie, A.,Sionke, S.,O'Mahony, A.,Povey, I. M.,Pemble, M. E.,O'Connor, E.,Hurley, P. K.,Newcomb, S. B.

2009

September

Microelectronic Engineering

Band offsets at interfaces of (100)InxGa1-xAs (0 <= x <= 0.53) with Al2O3 and HfO2

Validated

()

86

7-97-9

1550

15531550

The electron energy band alignment at interfaces of InxGa1-xAs (0 <= x <= 0.53) with atomic-layer deposited insulators Al2O3 and HfO2 is characterized using combined measurements of internal photoemission of electrons and photoconductivity. The measured energy of the InxGa1-x As valence band top is found to be only marginally influenced by the semiconductor composition. This result suggests that the observed band-gap narrowing from 1.42 to 0.75 eV when the In content increases from 0 to 0.53 occurs mostly through downshift of the semiconductor conduction band bottom. Electron states originating from the interfacial oxidation of InxGa1-xAs lead to reduction of the electron barrier at the semiconductor/oxide interface. (C) 2009 Elsevier B.V. All rights reserved,The electron energy band alignment at interfaces of InxGa1-xAs (0 <= x <= 0.53) with atomic-layer deposited insulators Al2O3 and HfO2 is characterized using combined measurements of internal photoemission of electrons and photoconductivity. The measured energy of the InxGa1-x As valence band top is found to be only marginally influenced by the semiconductor composition. This result suggests that the observed band-gap narrowing from 1.42 to 0.75 eV when the In content increases from 0 to 0.53 occurs mostly through downshift of the semiconductor conduction band bottom. Electron states originating from the interfacial oxidation of InxGa1-xAs lead to reduction of the electron barrier at the semiconductor/oxide interface. (C) 2009 Elsevier B.V. All rights reserved,

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