Povey, I. M.,Bardosova, M.,Dillon, F. C.,Chalvet, F.,Pemble, M. E.,Thomas, K.

2008

November

Thin Solid Films

A comparison of the GaAs atomic layer deposition infiltration of photonic crystals engineered by the controlled evaporation and Langmuir-Blodgett methods

Validated

()

517

22

811

813811

Photonic crystal thin films were fabricated on glass substrates both by the controlled evaporation method and the Langmuir-Blodgett deposition of a lattice of silica spheres. Infilling of the air spaces within the structures with GaAs was achieved using trimethylgallium and arsine tinder atomic-layer-deposition conditions. The effect of infiltration on the (2+1) dimensional structure of Langmuir-Blodgett photonic crystals, as compared to the face-centred cubic structure of controlled evaporation photonic crystals, is directly investigated with respect to the observed optical properties. (C) 2008 Elsevier B.V. All rights reserved.Photonic crystal thin films were fabricated on glass substrates both by the controlled evaporation method and the Langmuir-Blodgett deposition of a lattice of silica spheres. Infilling of the air spaces within the structures with GaAs was achieved using trimethylgallium and arsine tinder atomic-layer-deposition conditions. The effect of infiltration on the (2+1) dimensional structure of Langmuir-Blodgett photonic crystals, as compared to the face-centred cubic structure of controlled evaporation photonic crystals, is directly investigated with respect to the observed optical properties. (C) 2008 Elsevier B.V. All rights reserved.

0040-60900040-6090

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