Afanas'ev, V. V.,Badylevich, M.,Stesmans, A.,Brammertz, G.,Delabie, A.,Sionke, S.,O'Mahony, A.,Povey, I. M.,Pemble, M. E.,O'Connor, E.,Hurley, P. K.,Newcomb, S. B.

2008

November

Applied Physics Letters

Energy barriers at interfaces of (100)GaAs with atomic layer deposited Al(2)O(3) and HfO(2)

Validated

()

93

2121

Band alignment at the interfaces of (100)GaAs with Al(2)O(3) and HfO(2) grown using atomic layer deposition is determined using internal photoemission and photoconductivity measurements. Though the inferred conduction and valence band offsets for both insulators were found to be close to or larger than 2 eV, the interlayer grown by concomitant oxidation of GaAs reduces the barrier for electrons by approximately 1 eV. The latter may pose significant problems associated with electron injection from GaAs into the oxide.Band alignment at the interfaces of (100)GaAs with Al(2)O(3) and HfO(2) grown using atomic layer deposition is determined using internal photoemission and photoconductivity measurements. Though the inferred conduction and valence band offsets for both insulators were found to be close to or larger than 2 eV, the interlayer grown by concomitant oxidation of GaAs reduces the barrier for electrons by approximately 1 eV. The latter may pose significant problems associated with electron injection from GaAs into the oxide.

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