Peer-Reviewed Journal Details
Mandatory Fields
Coward, K. M.,Jones, A. C.,Steiner, A.,Bickley, J. F.,Smith, L. M.,Pemble, M. E.
2001
Journal of The Chemical Society-Dalton Transactions
Synthesis and crystal structures of trimethylindium adducts with bidentate and macrocyclic tertiary amines
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Optional Fields
11
41
4541
The structures of trimethylindium (Me3In) adducts with the bidentate tertiary amine N,N,N',N'-tetramethyl-4,4'-methylenebis(aniline)[MBDA] and the macrocyclic amines 1,4,8,11-tetramethyl-1,4,8,11-tetraazacyclotetradecane [N-4-aza crown] and 1,4,7,10,13,16-hexamethyl-1,4,7,10,13,16-hexaazacyclooctadecane [N-6-aza crown] have been determined by single crystal X-ray diffraction. The adducts have the following stoichiometries, Me3In . 2MBDA 1, 2Me(3)In . MBDA 2, 4Me(3)In .N-4-aza crown 3 and 6Me(3)In .N-6-aza crown 4. Compound 1 contains five-coordinate Me3In in a trigonal bipyramidal configuration and displays the longest In-N bond lengths yet reported (2.720(4), 2.865 Angstrom); 2-4 contain four-coordinate Me3In molecules in a tetrahedral configuration. Compounds 1-4 can be used as intermediate adducts in the adduct purification of Me3In for use in the MOVPE (metal organic vapour phase epitaxy) of InP and related III-V semiconductors.The structures of trimethylindium (Me3In) adducts with the bidentate tertiary amine N,N,N',N'-tetramethyl-4,4'-methylenebis(aniline)[MBDA] and the macrocyclic amines 1,4,8,11-tetramethyl-1,4,8,11-tetraazacyclotetradecane [N-4-aza crown] and 1,4,7,10,13,16-hexamethyl-1,4,7,10,13,16-hexaazacyclooctadecane [N-6-aza crown] have been determined by single crystal X-ray diffraction. The adducts have the following stoichiometries, Me3In . 2MBDA 1, 2Me(3)In . MBDA 2, 4Me(3)In .N-4-aza crown 3 and 6Me(3)In .N-6-aza crown 4. Compound 1 contains five-coordinate Me3In in a trigonal bipyramidal configuration and displays the longest In-N bond lengths yet reported (2.720(4), 2.865 Angstrom); 2-4 contain four-coordinate Me3In molecules in a tetrahedral configuration. Compounds 1-4 can be used as intermediate adducts in the adduct purification of Me3In for use in the MOVPE (metal organic vapour phase epitaxy) of InP and related III-V semiconductors.
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://WOS:000165940600006://WOS:000165940600006
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