Jones, A. C.,Leedham, T. J.,Wright, P. J.,Crosbie, M. J.,Williams, D. J.,Davies, H. O.,Fleeting, K. A.,O'Brien, P.,Pemble, M. E.

1999

July

Materials Science In Semiconductor Processing

The control of growth dynamics by the use of designed precursors for the MOCVD of electronic ceramics Part II

Validated

()

2

22

165

171165

MOCVD is increasingly being used for the deposition of ceramics such as Pb(Zr,Ti)O-3, TiO2 and SrBi2Ta2O9 which are important in the fabrication of devices. In order to exploit the full potential of MOCVD the properties of the precursors need to be tailored in order that parameters in the MOCVD process are optimised, In this paper we describe our approach to 'molecular design' and discuss how the substitution of simple alkoxide groups by beta-diketonates or donor-functionalised ligands can result in precursors with improved physical properties and optimum MOCVD characteristics. (C) 1999 Elsevier Science Ltd. All rights reserved.MOCVD is increasingly being used for the deposition of ceramics such as Pb(Zr,Ti)O-3, TiO2 and SrBi2Ta2O9 which are important in the fabrication of devices. In order to exploit the full potential of MOCVD the properties of the precursors need to be tailored in order that parameters in the MOCVD process are optimised, In this paper we describe our approach to 'molecular design' and discuss how the substitution of simple alkoxide groups by beta-diketonates or donor-functionalised ligands can result in precursors with improved physical properties and optimum MOCVD characteristics. (C) 1999 Elsevier Science Ltd. All rights reserved.

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