Patrikarakos, D. G.,Shukla, N.,Pemble, M. E.

1997

January

Journal of Crystal Growth

Reflectance anisotropy as an in situ monitor for the growth of InP on (001)InP by pseudo-atmospheric pressure atomic layer epitaxy

Validated

()

170

1-41-4

215

218215

Single wavelength reflectance anisotropy (RA) has been used to monitor the growth of InP onto (001) InP substrates in real time under atmospheric pressure atomic layer epitaxy ''(ALE)-like'' conditions in which the In and P precursors were introduced sequentially into the reactor. The RA data indicates that at temperatures below 325 degrees C the initial interaction of TMI with surface P-dimers results in a change in anisotropy and that the resulting surface is unreactive towards phosphine or additional TMI possibly as a result of a residual species of the type In(CH3)(x) where x = 1-3 acting as a site blocker or preventing In dimer formation. At higher temperatures, the RA data indicates that for InP growth on (001) InP using phosphine and trimethylindium (TMI) the onset of growth occurs between 300-325 degrees C. This observation is implied directly from the appearance of the recovery portion of the RA transient which indicates that the second half of the ALE-like cycle restores the surface to the starting P-stabilised conditions. This low temperature for the onset of growth as compared to conventional InP MOCVD is attributed to the operation of a surface catalysed reaction of both phosphine and TMI.Single wavelength reflectance anisotropy (RA) has been used to monitor the growth of InP onto (001) InP substrates in real time under atmospheric pressure atomic layer epitaxy ''(ALE)-like'' conditions in which the In and P precursors were introduced sequentially into the reactor. The RA data indicates that at temperatures below 325 degrees C the initial interaction of TMI with surface P-dimers results in a change in anisotropy and that the resulting surface is unreactive towards phosphine or additional TMI possibly as a result of a residual species of the type In(CH3)(x) where x = 1-3 acting as a site blocker or preventing In dimer formation. At higher temperatures, the RA data indicates that for InP growth on (001) InP using phosphine and trimethylindium (TMI) the onset of growth occurs between 300-325 degrees C. This observation is implied directly from the appearance of the recovery portion of the RA transient which indicates that the second half of the ALE-like cycle restores the surface to the starting P-stabilised conditions. This low temperature for the onset of growth as compared to conventional InP MOCVD is attributed to the operation of a surface catalysed reaction of both phosphine and TMI.

0022-02480022-0248

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