Yang, H.; Ye, N.; Phelan, R.; O'Carroll, J.; Kelly, B.; Han, W.; Wang, X.; Nudds, N.; Macsuibhne, N.; Gunning, F.; O'Brien, P.; Peters, F.H.; Corbett, B.

2013

February

Electronics Letters

Butterfly packaged high-speed and low leakage InGaAs quantum well photodiode for 2000nm wavelength systems

Published

()

communications, 2microns, detectors

49

4

281

282

An edge-coupled high-speed photodiode based on strained InGaAs
quantum wells for detection at 2000nm is demonstrated. The fabricated device shows a leakage current as low as 120nA at −3V bias voltage and a responsivity of around 0.3A/W at 2000nm. The high-speed butterfly packaging of the device is presented which shows a 3dB bandwidth of more than 10GHz. The device shows similar highspeed performance at 1550nm.

http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6464687&isnumber=6464656

10.1049/el.2012.4335