Crowley, MT,Heck, SC,Healy, SB,Osborne, S,Williams, DP,Schulz, S,O'Reilly, EP

2013

January

Semiconductor Science and Technology

Long wavelength transverse magnetic polarized absorption in 1.3 mu m InAs/InGaAs dots-in-a-well type active regions

Validated

()

ASSEMBLED QUANTUM DOTS SPECTROSCOPY GAIN

28

Edge-photovoltage measurements of InAs/GaAs 1.3 mu m dot-in-a-well structures clearly show a ground state (GS) transverse magnetic (TM) absorption. Based on eight-band k.p calculations we attribute this GS TM absorption peak to transitions between GS electrons and low-lying excited hole states which possess a significant light-hole component of the correct symmetry to recombine with the GS electrons.

ARTN 015012