Mathews, I,O'Mahony, D,Gocalinska, A,Manganaro, M,Pelucchi, E,Schmidt, M,Morrison, AP,Corbett, B

2013

January

Applied Physics Letters

InAlAs solar cell on a GaAs substrate employing a graded InxGa1-xAs-InP metamorphic buffer layer

Validated

()

102

Single junction In0.52Al0.48As solar cells have been grown on a (100) GaAs substrate by employing a 1 mu m thick compositionally graded InxGa1-xAs/InP metamorphic buffer layer to accommodate the 3.9% mismatch. Cells processed from the 0.8 mu m thick InAlAs layers had photovoltaic conversion efficiency of 5% with an open circuit voltage of 0.72 V, short-circuit current density of 9.3 mA/cm(2), and a fill factor of 74.5% under standard air mass 1.5 illumination. The threading dislocation density was estimated to be 3 x 10(8) cm(-2). (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4789521]

ARTN 033906