Peer-Reviewed Journal Details
Mandatory Fields
O'Connor, E.,O'Riordan, A.,Doyle, H.,Moynihan, S.,Cuddihy, A.,Redmond, G.
2005
May
Applied Physics Letters
Near-infrared electroluminescent devices based on colloidal HgTe quantum dot arrays
Validated
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Optional Fields
86
2020
Crystalline 4.6 nm HgTe quantum dots, stabilized by 1-thioglycerol ligands, were synthesized by wet chemical methods. Room-temperature photoluminescence spectra of the dots, both in solution and as solid arrays, exhibited near-infrared emission. Light-emitting devices were fabricated by deposition of quantum dot layers onto glass/indium tin oxide (ITO)/3,4-polyethylene-dioxythiophene-polystyrene sulfonate (PEDOT) substrates followed by top contacting with evaporated aluminum. Room-temperature near-infrared electroluminescence from 1 mm(2) ITO/PEDOT/HgTe/Al devices, centered at similar to 1600 nm, with an external quantum efficiency of 0.02% and brightness of 150 nW/mm(2) at 50 mA and 2.5 V was achieved. (c) 2005 American Institute of Physics.Crystalline 4.6 nm HgTe quantum dots, stabilized by 1-thioglycerol ligands, were synthesized by wet chemical methods. Room-temperature photoluminescence spectra of the dots, both in solution and as solid arrays, exhibited near-infrared emission. Light-emitting devices were fabricated by deposition of quantum dot layers onto glass/indium tin oxide (ITO)/3,4-polyethylene-dioxythiophene-polystyrene sulfonate (PEDOT) substrates followed by top contacting with evaporated aluminum. Room-temperature near-infrared electroluminescence from 1 mm(2) ITO/PEDOT/HgTe/Al devices, centered at similar to 1600 nm, with an external quantum efficiency of 0.02% and brightness of 150 nW/mm(2) at 50 mA and 2.5 V was achieved. (c) 2005 American Institute of Physics.
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