O'Riordan, A.,Dean, T.,Pez, M.,Redmond, G.

2005

February

Functional integration of microdevices by field assisted manipulation and trapping

Validated

()

80

33

467

471467

A novel programmable force field method is presented which enables controlled electric field assisted transport and localization of microdevices at silicon chip substrates. Electrically addressable chips bearing n x n arrays of receptor electrode sites are developed and field directed assembly methods are optimized for on-chip transport, trapping and integration of sub-100 mum discrete GaAs-based optoelectronic devices. Tweezer-less field assisted manipulation and trapping of discrete 50 mum diameter 670 nm emitting GaAs-based light emitting diodes is achieved. Following assembly in this manner, the LED devices are permanently integrated by solder reflow bonding to the receptor sites enabling direct device electrical characterization and successful demonstration of light emission.A novel programmable force field method is presented which enables controlled electric field assisted transport and localization of microdevices at silicon chip substrates. Electrically addressable chips bearing n x n arrays of receptor electrode sites are developed and field directed assembly methods are optimized for on-chip transport, trapping and integration of sub-100 mum discrete GaAs-based optoelectronic devices. Tweezer-less field assisted manipulation and trapping of discrete 50 mum diameter 670 nm emitting GaAs-based light emitting diodes is achieved. Following assembly in this manner, the LED devices are permanently integrated by solder reflow bonding to the receptor sites enabling direct device electrical characterization and successful demonstration of light emission.

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