Peer-Reviewed Journal Details
Mandatory Fields
Lin, J., Gomeniuk, Y.Y., Monaghan, S., Povey, I.M., Cherkaoui, K., O'Connor, ., Power, M., Hurley, P.K.
Journal of Applied Physics
An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors
Optional Fields
Capacitance voltage Capacitance-voltage hysteresis Electron trapping Electrons and holes Interfacial oxides Metal-oxide-semiconductor capacitors Native oxide layer Transition layers Aluminum Atomic layer deposition Charge trapping Dielectric devices Hafnium oxides Hysteresis Indium Interfaces (materials) MOS capacitors Gallium

In this work, we present the results of an investigation into charge trapping in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors (MOS capacitors), which is analysed using the hysteresis exhibited in the capacitance-voltage (C-V) response. The availability of both n and p doped In0.53Ga0.47As epitaxial layers allows the investigation of both hole and electron trapping in the bulk of HfO2 and Al2O3 films formed using atomic layer deposition (ALD). The HfO2/In0.53Ga 0.47As and Al2O3/In0.53Ga 0.47As MOS capacitors exhibit an almost reversible trapping behaviour, where the density of trapped charge is of a similar level to high-k/In0.53Ga0.47As interface state density, for both electrons and holes in the HfO2 and Al2O3 films. The experimental results demonstrate that the magnitude of the C-V hysteresis increases significantly for samples which have a native oxide layer present between the In0.53Ga0.47As surface and the high-k oxide, suggesting that the charge trapping responsible for the C-V hysteresis is taking place primarily in the interfacial oxide transition layer between the In0.53Ga0.47As and the ALD deposited oxide. Analysis of samples with a range of oxide thickness values also demonstrates that the magnitude of the C-V hysteresis window increases linearly with the increasing oxide thickness, and the corresponding trapped charge density is not a function of the oxide thickness, providing further evidence that the charge trapping is predominantly localised as a line charge and taking place primarily in the interfacial oxide transition layer located between the In0.53Ga 0.47As and the high-k oxide.

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